Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
MOSFET, P, -100V, -23A, TO-220
Transistor Type: MOSFET
On State Resistance: 0.117ohm
Power Dissipation: 94W
Cont Current Id: 19A
Max On State Resistance: 0.117ohm
Max Voltage Vgs th: -4V
Power Dissipation Pd: 94W
Pulse Current Idm: 76A
Voltage Vgs Rds on Measurement: -10V
What you will receive:
IRF9540N MOSFET, (Quantity as Required)